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What Makeup Companies Does Not Contain Boron Nitrdie

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Refractory compound of boron and nitrogen with formula BN

Boron nitride
Magnified sample of crystalline hexagonal boron nitride
Names
IUPAC name

Boron nitride
Identifiers

CAS Number
  • 10043-eleven-5 check Y

3D model (JSmol)
  • Hexagonal (graphite) construction: Interactive image
  • Sphalerite structure: Interactive epitome
  • Wurtzite construction: Interactive image
ChEBI
  • CHEBI:50883 check Y
ChemSpider
  • 59612 check Y
ECHA InfoCard 100.030.111 Edit this at Wikidata
EC Number
  • 233-136-half dozen

Gmelin Reference

 216
MeSH Elbor

PubChem CID

  • 66227
RTECS number
  • ED7800000
UNII
  • 2U4T60A6YD ☒ Due north

CompTox Dashboard (EPA)

  • DTXSID5051498 Edit this at Wikidata

InChI

  • InChI=1S/BN/c1-iicheck Y

    Key: PZNSFCLAULLKQX-UHFFFAOYSA-Ncheck Y

  • InChI=1S/B2N2/c1-3-2-4-1

    Key: AMPXHBZZESCUCE-UHFFFAOYSA-North

  • InChI=1S/B3N3/c1-4-2-half-dozen-iii-5-1

    Fundamental: WHDCVGLBMWOYDC-UHFFFAOYSA-N

  • InChI=one/BN/c1-2

    Fundamental: PZNSFCLAULLKQX-UHFFFAOYAL

SMILES

  • Hexagonal (graphite) structure: [BH-]1=[nH+][B-]2=[nH+][BH-]=[n+]iii[BH-]=[nH+][B-]4=[nH+][BH-]=[n+]5[BH-]=[nH+][B-]six=[nH+][BH-]=[northward+]1[B-]7=[n+]2[B-]3=[n+]4[B-]five=[northward+]67

  • Sphalerite structure: [NH+]12[B-][NH+]3[B-][NH+]([BH-]fourteen)[BH-]1[N+]five([BH-]38)[B-]26[NH+]2[BH-]([N+]4)[NH+]ane[B-][NH+]3[BH-]2[N+][BH-]([NH+]6[BH-]([NH+])[NH+]68)[NH+]([B-]6)[BH-]35

  • Wurtzite structure: [Due north+]7[BH-]two[N+][BH-]3[NH+]eight[BH-]4[N+][BH-]5[North+][B-]78[N+]ninety[B-][NH+]5[B-][NH+]4[BH-]9[NH+]three[B-][NH+]2[B-]0
Backdrop

Chemical formula

 B Northward
Molar mass 24.82 g/mol
Appearance Colorless crystals
Density 2.1 one thousand/cmiii (h-BN); iii.45 yard/cm3 (c-BN)
Melting indicate 2,973 °C (5,383 °F; 3,246 Thou) sublimates (cBN)

Solubility in water

 Insoluble
Electron mobility 200 cm2/(V·s) (cBN)

Refractive index (due north D)

 1.8 (h-BN); two.1 (c-BN)
Structure

Crystal structure

 Hexagonal, sphalerite, wurtzite
Thermochemistry

Heat capacity (C)

nineteen.7 J/(K·mol)[1]

Std molar
entropy (Due south o 298)

fourteen.viii J/K mol[one]

Std enthalpy of
formation (Δf H ⦵ 298)

−254.four kJ/mol[1]

Gibbs free energy (Δf 1000˚)

−228.four kJ/mol[1]
Hazards
GHS labelling:

Pictograms

 GHS07: Exclamation mark

Signal word

 Warning

Hazard statements

 H319, H335, H413

Precautionary statements

 P261, P264, P271, P273, P280, P304+P340, P305+P351+P338, P312, P337+P313, P403+P233, P405, P501
NFPA 704 (fire diamond)

0

0

0

Related compounds

Related compounds
  • Boron arsenide
  • Boron carbide
  • Boron phosphide
  • Boron trioxide

Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

☒ Nverify (what is check Y ☒ N  ?)

Infobox references

Chemical compound

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form respective to graphite is the most stable and soft amidst BN polymorphs, and is therefore used every bit a lubricant and an additive to cosmetic products. The cubic (zincblende aka sphalerite structure) variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.[ii]

Because of splendid thermal and chemic stability, boron nitride ceramics are used in high-temperature equipment and metallic casting. Boron nitride has potential utilize in nanotechnology.

Construction [edit]

Boron nitride exists in multiple forms that differ in the organization of the boron and nitrogen atoms, giving rise to varying bulk properties of the material.

Amorphous form (a-BN) [edit]

The baggy class of boron nitride (a-BN) is non-crystalline, defective any long-altitude regularity in the arrangement of its atoms. It is analogous to amorphous carbon.

All other forms of boron nitride are crystalline.

Hexagonal form (h-BN) [edit]

The most stable crystalline form is the hexagonal ane, also called h-BN, α-BN, 1000-BN, and graphitic boron nitride. Hexagonal boron nitride (point group = D6h; infinite group = P63/mmc) has a layered construction similar to graphite. Within each layer, boron and nitrogen atoms are jump by potent covalent bonds, whereas the layers are held together by weak van der Waals forces. The interlayer "registry" of these sheets differs, all the same, from the pattern seen for graphite, because the atoms are eclipsed, with boron atoms lying over and above nitrogen atoms. This registry reflects the local polarity of the B–N bonds, as well as interlayer N-donor/B-acceptor characteristics. Likewise, many metastable forms consisting of differently stacked polytypes exist. Therefore, h-BN and graphite are very shut neighbors, and the material can accommodate carbon as a substituent element to form BNCs. BC6Northward hybrids have been synthesized, where carbon substitutes for some B and N atoms.[3]

Cubic form (c-BN) [edit]

Cubic boron nitride has a crystal structure analogous to that of diamond. Consistent with diamond being less stable than graphite, the cubic grade is less stable than the hexagonal form, but the conversion rate betwixt the 2 is negligible at room temperature, equally it is for diamond. The cubic form has the sphalerite crystal structure, the aforementioned every bit that of diamond (with ordered B and Due north atoms), and is as well called β-BN or c-BN.

Wurtzite class (w-BN) [edit]

The wurtzite form of boron nitride (w-BN; point grouping = C6v; space group = P63mc) has the same structure every bit lonsdaleite, a rare hexagonal polymorph of carbon. As in the cubic grade, the boron and nitrogen atoms are grouped into tetrahedra.[4] In the wurtzite class, the boron and nitrogen atoms are grouped into half dozen-membered rings. In the cubic form all rings are in the chair configuration, whereas in w-BN the rings between 'layers' are in boat configuration. Earlier optimistic reports predicted that the wurtzite form was very strong, and was estimated by a simulation equally potentially having a strength xviii% stronger than that of diamond. Since only small amounts of the mineral exist in nature, this has non yet been experimentally verified.[5] Recent studies measured w-BN hardness at 46 GPa, slightly harder than commercial borides just softer than the cubic form of boron nitride.[2]

  • Hexagonal form (h-BN)
    hexagonal analogous to graphite

Backdrop [edit]

Concrete [edit]

Properties of amorphous and crystalline BN, graphite and diamond.
Some properties of h-BN and graphite differ within the basal planes (∥) and perpendicular to them (⟂)
Textile Boron nitride (BN) Graphite[6] Diamond[seven]
a-[eight] [9] [10] h- c-[11] [7] due west-
Density (g/cmthree) 2.28 ~two.1 3.45 3.49 ~2.1 3.515
Knoop hardness (GPa) 10 45 34 100
Majority modulus (GPa) 100 36.5 400 400 34 440
Thermal electrical conductivity
(Westward/yard·K) 		iii 600 ∥,
30 ⟂ 		740 200–2000 ∥,
2–800 ⟂ 		600–2000
Thermal expansion (10−6/K) −2.7 ∥, 38 ⟂ 1.2 two.7 −1.5 ∥, 25 ⟂ 0.8
Band gap (eV) 5.05 5.2 6.4 4.5–5.five 0 five.5
Refractive index one.seven 1.8 ii.1 2.05 2.4
Magnetic susceptibility
(µemu/one thousand)[12] 		−0.48 ∥,
−17.3 ⟂ 		−0.two – −2.7 ∥,
−20 – −28 ⟂ 		−i.6

The partly ionic structure of BN layers in h-BN reduces covalency and electrical electrical conductivity, whereas the interlayer interaction increases resulting in college hardness of h-BN relative to graphite. The reduced electron-delocalization in hexagonal-BN is also indicated by its absence of color and a large band gap. Very different bonding – stiff covalent within the basal planes (planes where boron and nitrogen atoms are covalently bonded) and weak between them – causes high anisotropy of nearly properties of h-BN.

For example, the hardness, electrical and thermal conductivity are much college within the planes than perpendicular to them. On the contrary, the properties of c-BN and w-BN are more than homogeneous and isotropic.

Those materials are extremely difficult, with the hardness of bulk c-BN existence slightly smaller and westward-BN even college than that of diamond.[13] Polycrystalline c-BN with grain sizes on the order of 10 nm is likewise reported to have Vickers hardness comparable or college than diamond.[fourteen] Because of much better stability to heat and transition metals, c-BN surpasses diamond in mechanical applications, such as machining steel.[fifteen] The thermal conductivity of BN is among the highest of all electric insulators (see table).

Boron nitride can be doped p-type with beryllium and due north-type with boron, sulfur, silicon or if co-doped with carbon and nitrogen.[11] Both hexagonal and cubic BN are wide-gap semiconductors with a band-gap free energy respective to the UV region. If voltage is applied to h-BN[16] [17] or c-BN,[18] then it emits UV light in the range 215–250 nm and therefore can potentially be used as low-cal-emitting diodes (LEDs) or lasers.

Piffling is known on melting behavior of boron nitride. It sublimates at 2973 °C at normal pressure level releasing nitrogen gas and boron, but melts at elevated pressure.[xix] [20]

Thermal stability [edit]

Hexagonal and cubic (and probably w-BN) BN show remarkable chemic and thermal stabilities. For instance, h-BN is stable to decomposition at temperatures up to 1000 °C in air, 1400 °C in vacuum, and 2800 °C in an inert atmosphere. The reactivity of h-BN and c-BN is relatively similar, and the information for c-BN are summarized in the table below.

Reactivity of c-BN with solids[11]
Solid Ambience Activity Threshold temperature (°C)
Mo 10−2 Pa vacuum Reaction 1360
Ni 10−2 Pa vacuum Wetting[a] 1360
Fe, Ni, Co Argon React 1400–1500
Al 10−2 Pa vacuum Wetting and reaction 1050
Si 10−iii Pa vacuum Wetting 1500
Cu, Ag, Au, Ga, In, Ge, Sn ten−3 Pa vacuum No wetting 1100
B No wetting 2200
Al2O3 + B2O3 10−2 Pa vacuum No reaction 1360

Thermal stability of c-BN tin be summarized equally follows:[xi]

  • In air or oxygen: BtwoOthree protective layer prevents further oxidation to ~1300 °C; no conversion to hexagonal class at 1400 °C.
  • In nitrogen: some conversion to h-BN at 1525 °C later on 12 h.
  • In vacuum ( 10−5 Pa): conversion to h-BN at 1550–1600 °C.

Chemical stability [edit]

Boron nitride is insoluble in the usual acids, but is soluble in alkaline molten salts and nitrides, such as LiOH, KOH, NaOH-NaiiCO3, NaNO3, Li3N, Mg3Northwardii, Sr3Due north2, BathreeN2 or LithreeBNtwo, which are therefore used to etch BN.[11]

Thermal conductivity [edit]

The theoretical thermal conductivity of hexagonal boron nitride nanoribbons (BNNRs) tin can approach 1700–2000 W/m·G, which has the same social club of magnitude as the experimental measured value for graphene, and tin can exist comparable to the theoretical calculations for graphene nanoribbons.[21] [22] Moreover, the thermal transport in the BNNRs is anisotropic. The thermal electrical conductivity of zigzag-edged BNNRs is about 20% larger than that of armchair-edged nanoribbons at room temperature.[23]

Natural occurrence [edit]

In 2009, a naturally occurring boron nitride mineral in the cubic class (c-BN) was reported in Tibet, and the name qingsongite proposed. The substance was institute in dispersed micron-sized inclusions in chromium-rich rocks. In 2013, the International Mineralogical Association affirmed the mineral and the proper noun.[24] [25] [26] [27]

Synthesis [edit]

Training and reactivity of hexagonal BN [edit]

Boron nitride is produced synthetically. Hexagonal boron nitride is obtained past the reacting boron trioxide (BtwoO3) or boric acid (H3BO3) with ammonia (NHthree) or urea (CO(NHtwo)2) in a nitrogen atmosphere:[28]

B2O3 + 2 NHthree → two BN + 3 H2O (T = 900 °C)
B(OH)3 + NH3 → BN + three H2O (T = 900 °C)
B2Oiii + CO(NH2)2 → 2 BN + CO2 + two H2O (T > 1000 °C)
B2O3 + iii CaB6 + x N2 → twenty BN + 3 CaO (T > 1500 °C)

The resulting matted (amorphous) boron nitride contains 92–95% BN and 5–8% B2Oiii. The remaining BiiO3 can be evaporated in a second pace at temperatures > 1500 °C in order to achieve BN concentration >98%. Such annealing also crystallizes BN, the size of the crystallites increasing with the annealing temperature.[xv] [29]

h-BN parts can be fabricated inexpensively by hot-pressing with subsequent machining. The parts are made from boron nitride powders adding boron oxide for better compressibility. Sparse films of boron nitride can be obtained past chemic vapor degradation from boron trichloride and nitrogen precursors.[30] Combustion of boron powder in nitrogen plasma at 5500 °C yields ultrafine boron nitride used for lubricants and toners.[31]

Boron nitride reacts with iodine fluoride in trichlorofluoromethane at −30 °C to produce an extremely sensitive contact explosive, NIiii, in low yield.[32] Boron nitride reacts with nitrides of lithium, alkaline earth metals and lanthanides to form nitridoborate compounds.[33] For example:

LiiiiN + BN → LithreeBN2

Intercalation of hexagonal BN [edit]

Structure of hexagonal boron nitride intercalated with potassium (B4N4K)

Similar to graphite, various molecules, such every bit NH3 [34] or alkali metals,[35] can be intercalated into hexagonal boron nitride, that is inserted between its layers. Both experiment and theory propose the intercalation is much more difficult for BN than for graphite.[36]

Preparation of cubic BN [edit]

Synthesis of c-BN uses same methods as that of diamond: cubic boron nitride is produced past treating hexagonal boron nitride at high pressure level and temperature, much as synthetic diamond is produced from graphite. Direct conversion of hexagonal boron nitride to the cubic course has been observed at pressures between 5 and 18 GPa and temperatures between 1730 and 3230 °C, that is similar parameters as for straight graphite-diamond conversion.[37] The addition of a small amount of boron oxide can lower the required pressure to 4–vii GPa and temperature to 1500 °C. As in diamond synthesis, to farther reduce the conversion pressures and temperatures, a catalyst is added, such as lithium, potassium, or magnesium, their nitrides, their fluoronitrides, h2o with ammonium compounds, or hydrazine.[38] [39] Other industrial synthesis methods, again borrowed from diamond growth, use crystal growth in a temperature gradient, or explosive shock wave. The shock moving ridge method is used to produce material chosen heterodiamond, a superhard compound of boron, carbon, and nitrogen.[xl]

Low-pressure deposition of thin films of cubic boron nitride is possible. As in diamond growth, the major problem is to suppress the growth of hexagonal phases (h-BN or graphite, respectively). Whereas in diamond growth this is achieved by adding hydrogen gas, boron trifluoride is used for c-BN. Ion beam deposition, plasma-enhanced chemic vapor deposition, pulsed laser deposition, reactive sputtering, and other physical vapor degradation methods are used as well.[thirty]

Preparation of wurtzite BN [edit]

Wurtzite BN can be obtained via static loftier-pressure or dynamic daze methods.[41] The limits of its stability are not well defined. Both c-BN and w-BN are formed by compressing h-BN, simply formation of w-BN occurs at much lower temperatures close to 1700 °C.[38]

Production statistics [edit]

Whereas the production and consumption figures for the raw materials used for BN synthesis, namely boric acid and boron trioxide, are well known (encounter boron), the corresponding numbers for the boron nitride are not listed in statistical reports. An approximate for the 1999 globe production is 300 to 350 metric tons. The major producers and consumers of BN are located in the Usa, Japan, Cathay and Frg. In 2000, prices varied from about $75–120/kg for standard industrial-quality h-BN and were about upwards to $200–400/kg for high purity BN grades.[28]

Applications [edit]

Hexagonal BN [edit]

Hexagonal BN (h-BN) is the almost widely used polymorph. Information technology is a good lubricant at both low and high temperatures (upwardly to 900 °C, even in an oxidizing atmosphere). h-BN lubricant is particularly useful when the electrical electrical conductivity or chemic reactivity of graphite (alternative lubricant) would be problematic. In internal combustion engines, where graphite could be oxidized and turn into carbon sludge, h-BN with its superior thermal stability tin be added to engine lubricant, however, with all nano-particles intermission, Brownian-motion settlement is a key problem and settlement tin clog engine oil filters, which limits solid lubricants application in a combustion engine to merely automotive race settings, where engine re-building is a mutual practice. Since carbon has appreciable solubility in certain alloys (such as steels), which may lead to degradation of properties, BN is often superior for high temperature and/or loftier pressure applications. Some other reward of h-BN over graphite is that its lubricity does non crave water or gas molecules trapped between the layers. Therefore, h-BN lubricants tin be used even in vacuum, eastward.grand. in space applications. The lubricating properties of fine-grained h-BN are used in cosmetics, paints, dental cements, and pencil leads.[42]

Hexagonal BN was commencement used in cosmetics around 1940 in Japan. However, because of its high price, h-BN was soon abandoned for this awarding. Its apply was revitalized in the tardily 1990s with the optimization h-BN production processes, and currently h-BN is used by well-nigh all leading producers of cosmetic products for foundations, make-up, centre shadows, blushers, kohl pencils, lipsticks and other skincare products.[15]

Because of its fantabulous thermal and chemical stability, boron nitride ceramics are traditionally used as parts of loftier-temperature equipment. h-BN tin be included in ceramics, alloys, resins, plastics, rubbers, and other materials, giving them self-lubricating backdrop. Such materials are suitable for construction of east.g. bearings and in steelmaking.[fifteen] Plastics filled with BN take less thermal expansion likewise as higher thermal conductivity and electrical resistivity. Due to its excellent dielectric and thermal backdrop, BN is used in electronics e.grand. equally a substrate for semiconductors, microwave-transparent windows, as a heat conductive notwithstanding electrically insulating filler in thermal pastes, and as a structural material for seals.[43] Many quantum devices utilize multilayer h-BN every bit a substrate cloth. Information technology tin also be used as a dielectric in resistive random access memories.[44] [45]

Hexagonal BN is used in xerographic process and laser printers equally a accuse leakage barrier layer of the photograph drum.[46] In the automotive industry, h-BN mixed with a binder (boron oxide) is used for sealing oxygen sensors, which provide feedback for adjusting fuel flow. The binder utilizes the unique temperature stability and insulating backdrop of h-BN.[15]

Parts tin can be fabricated by hot pressing from 4 commercial grades of h-BN. Class HBN contains a boron oxide binder; it is usable up to 550–850 °C in oxidizing atmosphere and upward to 1600 °C in vacuum, merely due to the boron oxide content is sensitive to water. Form HBR uses a calcium borate binder and is usable at 1600 °C. Grades HBC and HBT incorporate no folder and can be used up to 3000 °C.[47]

Boron nitride nanosheets (h-BN) can be deposited by catalytic decomposition of borazine at a temperature ~1100 °C in a chemical vapor deposition setup, over areas upwardly to about 10 cmii. Owing to their hexagonal diminutive construction, small lattice mismatch with graphene (~2%), and loftier uniformity they are used every bit substrates for graphene-based devices.[48] BN nanosheets are besides excellent proton conductors. Their high proton transport rate, combined with the high electrical resistance, may lead to applications in fuel cells and water electrolysis.[49]

h-BN has been used since the mid-2000s every bit a bullet and bore lubricant in precision target rifle applications every bit an alternative to molybdenum disulfide coating, commonly referred to as "moly". It is claimed to increase effective barrel life, increase intervals between bore cleaning, and decrease the deviation in betoken of bear upon betwixt clean diameter first shots and subsequent shots.[fifty]

Cubic BN [edit]

Cubic boron nitride (CBN or c-BN) is widely used as an annoying.[51] Its usefulness arises from its insolubility in atomic number 26, nickel, and related alloys at high temperatures, whereas diamond is soluble in these metals. Polycrystalline c-BN (PCBN) abrasives are therefore used for machining steel, whereas diamond abrasives are preferred for aluminum alloys, ceramics, and stone. When in contact with oxygen at high temperatures, BN forms a passivation layer of boron oxide. Boron nitride binds well with metals, due to germination of interlayers of metal borides or nitrides. Materials with cubic boron nitride crystals are ofttimes used in the tool $.25 of cutting tools. For grinding applications, softer binders, due east.grand. resin, porous ceramics, and soft metals, are used. Ceramic binders can exist used as well. Commercial products are known under names "Borazon" (by Diamond Innovations), and "Elbor" or "Cubonite" (by Russian vendors).[42]

Opposite to diamond, large c-BN pellets tin be produced in a simple procedure (chosen sintering) of annealing c-BN powders in nitrogen flow at temperatures slightly below the BN decomposition temperature. This ability of c-BN and h-BN powders to fuse allows inexpensive production of large BN parts.[42]

Similar to diamond, the combination in c-BN of highest thermal electrical conductivity and electrical resistivity is ideal for rut spreaders.

As cubic boron nitride consists of light atoms and is very robust chemically and mechanically, it is one of the pop materials for Ten-ray membranes: low mass results in minor X-ray absorption, and good mechanical properties let usage of sparse membranes, thus further reducing the absorption.[52]

Baggy BN [edit]

Layers of baggy boron nitride (a-BN) are used in some semiconductor devices, e.g. MOSFETs. They tin be prepared by chemic decomposition of trichloroborazine with caesium, or by thermal chemical vapor degradation methods. Thermal CVD can be also used for deposition of h-BN layers, or at high temperatures, c-BN.[53]

Other forms of boron nitride [edit]

Atomically thin boron nitride [edit]

Hexagonal boron nitride can be exfoliated to mono or few atomic layer sheets. Due to its analogous structure to that of graphene, atomically thin boron nitride is sometimes called white graphene.[54]

Mechanical properties [edit]

Atomically sparse boron nitride is i of the strongest electrically insulating materials. Monolayer boron nitride has an boilerplate Young's modulus of 0.865TPa and fracture strength of lxx.5GPa, and in contrast to graphene, whose strength decreases dramatically with increased thickness, few-layer boron nitride sheets have a strength similar to that of monolayer boron nitride.[55]

Thermal conductivity [edit]

Atomically thin boron nitride has one of the highest thermal conductivity coefficients (751 W/mK at room temperature) among semiconductors and electrical insulators, and its thermal conductivity increases with reduced thickness due to less intra-layer coupling.[56]

Thermal stability [edit]

The air stability of graphene shows a clear thickness dependence: monolayer graphene is reactive to oxygen at 250 °C, strongly doped at 300 °C, and etched at 450 °C; in contrast, bulk graphite is non oxidized until 800 °C.[57] Atomically thin boron nitride has much better oxidation resistance than graphene. Monolayer boron nitride is not oxidized till 700 °C and can sustain up to 850 °C in air; bilayer and trilayer boron nitride nanosheets take slightly higher oxidation starting temperatures.[58] The fantabulous thermal stability, loftier impermeability to gas and liquid, and electric insulation make atomically thin boron nitride potential blanket materials for preventing surface oxidation and corrosion of metals[59] [60] and other two-dimensional (2d) materials, such as black phosphorus.[61]

Meliorate surface adsorption [edit]

Atomically thin boron nitride has been found to take meliorate surface adsorption capabilities than bulk hexagonal boron nitride.[62] According to theoretical and experimental studies, atomically thin boron nitride as an adsorbent experiences conformational changes upon surface adsorption of molecules, increasing adsorption free energy and efficiency. The synergic effect of the atomic thickness, high flexibility, stronger surface adsorption capability, electrical insulation, impermeability, high thermal and chemical stability of BN nanosheets can increase the Raman sensitivity past up to two orders, and in the concurrently attain long-term stability and extraordinary reusability non achievable past other materials.[63] [64]

Dielectric backdrop [edit]

Atomically thin hexagonal boron nitride is an first-class dielectric substrate for graphene, molybdenum disulfide (MoSii), and many other 2D material-based electronic and photonic devices. As shown past electric forcefulness microscopy (EFM) studies, the electrical field screening in atomically thin boron nitride shows a weak dependence on thickness, which is in line with the smooth decay of electric field inside few-layer boron nitride revealed by the kickoff-principles calculations.[57]

Raman characteristics [edit]

Raman spectroscopy has been a useful tool to study a diversity of second materials, and the Raman signature of loftier-quality atomically thin boron nitride was beginning reported by Gorbachev et al. in 2011.[65] and Li et al.[58] However, the two reported Raman results of monolayer boron nitride did not agree with each other. Cai et al., therefore, conducted systematic experimental and theoretical studies to reveal the intrinsic Raman spectrum of atomically thin boron nitride.[66] It reveals that atomically sparse boron nitride without interaction with a substrate has a M band frequency similar to that of bulk hexagonal boron nitride, simply strain induced by the substrate can cause Raman shifts. All the same, the Raman intensity of G band of atomically thin boron nitride can be used to judge layer thickness and sample quality.

Top: absorption of cyclohexane by BN aerogel. Cyclohexane is stained with Sudan Two reddish dye and is floating on water. Bottom: reuse of the aerogel after burning in air.[67]

Boron nitride nanomesh [edit]

Boron nitride nanomesh is a nanostructured two-dimensional material. It consists of a single BN layer, which forms past self-assembly a highly regular mesh afterwards loftier-temperature exposure of a clean rhodium[68] or ruthenium[69] surface to borazine under ultra-high vacuum. The nanomesh looks like an assembly of hexagonal pores. The distance between two pore centers is 3.2 nm and the pore diameter is ~2 nm. Other terms for this material are boronitrene or white graphene.[70]

The boron nitride nanomesh is non only stable to decomposition under vacuum,[68] air[71] and some liquids,[72] [73] simply also up to temperatures of 800 °C.[68] In addition, it shows the extraordinary ability to trap molecules[72] and metallic clusters[69] which have similar sizes to the nanomesh pores, forming a well-ordered assortment. These characteristics promise interesting applications of the nanomesh in areas like catalysis, surface functionalisation, spintronics, quantum computing and data storage media like hard drives.[74]

BN nanotubes are flame resistant, as shown in this comparative test of airplanes made of cellullose, carbon buckypaper and BN nanotube buckypaper.[75]

Boron nitride nanotubes [edit]

Boron nitride tubules were first made in 1989 by Shore and Dolan This piece of work was patented in 1989 and published in 1989 thesis (Dolan) and so 1993 Scientific discipline. The 1989 work was as well the outset preparation of baggy BN by B-trichloroborazine and cesium metallic.

Boron nitride nanotubes were predicted in 1994[76] and experimentally discovered in 1995.[77] They can be imagined every bit a rolled up sheet of h-boron nitride. Structurally, it is a shut analog of the carbon nanotube, namely a long cylinder with diameter of several to hundred nanometers and length of many micrometers, except carbon atoms are alternately substituted by nitrogen and boron atoms. However, the properties of BN nanotubes are very different: whereas carbon nanotubes tin can exist metal or semiconducting depending on the rolling direction and radius, a BN nanotube is an electrical insulator with a bandgap of ~5.5 eV, basically contained of tube chirality and morphology.[78] In addition, a layered BN structure is much more thermally and chemically stable than a graphitic carbon structure.[79] [lxxx]

Boron nitride aerogel [edit]

Boron nitride aerogel is an aerogel made of highly porous BN. It typically consists of a mixture of deformed BN nanotubes and nanosheets. It can have a density equally low every bit 0.six mg/cm3 and a specific surface expanse as high as 1050 thousandtwo/thou, and therefore has potential applications equally an absorbent, catalyst support and gas storage medium. BN aerogels are highly hydrophobic and tin absorb upwardly to 160 times their weight in oil. They are resistant to oxidation in air at temperatures up to 1200 °C, and hence can be reused after the absorbed oil is burned out past flame. BN aerogels tin be prepared by template-assisted chemical vapor deposition using borazine every bit the feed gas.[67]

Composites containing BN [edit]

Addition of boron nitride to silicon nitride ceramics improves the thermal shock resistance of the resulting material. For the same purpose, BN is added also to silicon nitride-alumina and titanium nitride-alumina ceramics. Other materials being reinforced with BN include alumina and zirconia, borosilicate glasses, glass ceramics, enamels, and composite ceramics with titanium boride-boron nitride, titanium boride-aluminium nitride-boron nitride, and silicon carbide-boron nitride limerick.[81]

Health issues [edit]

Boron nitride (forth with Si3N4, NbN, and BNC) is reported to show weak fibrogenic activity, and to cause pneumoconiosis when inhaled in particulate form. The maximum concentration recommended for nitrides of nonmetals is 10 mg/m3 for BN and 4 for AlN or ZrN.[eleven]

See also [edit]

  • Beta carbon nitride
  • Boron suboxide
  • Superhard materials
  • Wide-bandgap semiconductors

Notes [edit]

  1. ^ Hither wetting refers to the ability of a molten metal to go on contact with solid BN

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External links [edit]

  • National Pollutant Inventory: Boron and Compounds
  • Materials Safety Data Canvass at University of Oxford

Source: https://en.wikipedia.org/wiki/Boron_nitride

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